 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK3439 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3439 DC-DC Converter Relay Drive and Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 3.8 m (typ.) High forward transfer admittance: |Yfs| = 70 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 30 V) Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Pulse (t < 1 ms) = Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 20 75 300 125 731 75 12.5 150 -55 to 150 A W mJ A mJ C C Unit V V V JEDEC JEITA TOSHIBA SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.00 Unit C/W Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin. 4 Note 1: Please use devices on conditions that the channel temperature is below 150C. Note 2: VDD = 24 V, Tch = 25C (initial), L = 100 H, RG = 25 , IAR = 75 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 Marking Lot Number K3439 Type Month (starting from alphabet A) Year (last number of the christian era) 1 2001-12-11 2SK3439 Electrical Characteristics (Note 4) (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf 10 V VGS 0V 4.7 ID = 38 A VOUT RL = 0.39 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 38 A VGS = 4 V, ID = 38 A VDS = 10 V, ID = 38 A Min 30 1.3 35 Typ. 3.8 5.0 70 5450 620 1850 15 30 65 Max 10 100 2.5 5.0 10 ns pF Unit A A V V m S VDD 15 V Turn-off time toff Duty < 1%, tw = 10 s = Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge Qg Qgs Qgd 110 VDD 34 V, VGS = 10 V, ID = 75 A 116 84 32 nC Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin. (However, while switching times are measured, please don't connect and ground it.) Source-Drain Ratings and Characteristics (Note 5) (Ta = 25C) Characteristics Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR1 IDRP1 IDR2 IDRP2 VDS2F trr Qrr Test Condition IDR1 = 75 A, VGS = 0 V IDR = 75 A, VGS = 0 V, dIDR/dt = 50 A/s Min Typ. 120 180 Max 75 300 1 4 -1.5 Unit A A A A V ns nC Note 5: drain, flowing current value between the S2 pin, open the S1 pin drain, flowing current value between the S1 pin, open the S2 pin Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin. 2 2001-12-11 2SK3439 ID - VDS 100 Common source Tc = 25C Pulse test 100 6 8 4 3.5 80 10 4 6 ID - VDS 3.4 Common source Tc = 25C Pulse test 80 (A) 10 60 (A) 3.3 ID ID 60 3.2 Drain current Drain current 40 3.0 40 3.0 20 VGS = 2.8 V 20 VGS = 2.8 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 160 Common source VDS = 10 V Pulse test 0.8 VDS - VGS Common source Tc = 25C Pulse test 0.6 (A) 80 Drain-source voltage VDS 120 Drain current ID (V) 0.4 ID = 75 A 0.2 38 19 40 Tc = -55C 100 0 0 2 25 4 6 0 0 5 10 15 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 500 30 Common source Tc = -55C Tc = 25C Pulse test 10 RDS (ON) - ID (S) Yfs 300 Forward transfer admittance 100 50 30 25 100 Drain-source on resistance RDS (ON) (m) 5 3 VGS = 4 V 10 10 5 3 1 3 5 10 30 Common source VDS = 10 V Pulse test 50 100 300 1 0.5 1 3 5 10 30 50 100 Drain current ID (A) Drain current ID (A) 3 2001-12-11 2SK3439 RDS (ON) - Tc 6 Common source VDS = 10 V Pulse test ID = 75 A 300 100 50 30 10 5 3 1 0.5 0.3 0.1 0 IDR - VDS (A) 5 10 5 Drain-source on resistance RDS (ON) (m ) 3 4 3 Drain reverse current IDR 19, 38 1 VGS = 0 V 2 1 Common source Tc = 25C Pulse test 0 -80 -40 0 40 80 120 160 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 Ciss 4 Vth - Tc Common source Gate threshold voltage Vth (V) VDS = 10 V 3 ID = 1 mA Pulse test 3000 (pF) Coss 1000 Crss Common source 300 VGS = 0 V f = 1 MHz Tc = 25C 100 0.1 0.3 1 3 10 30 Capacitance C 2 1 Drain-source voltage VDS (V) 0 -80 -40 0 40 80 120 160 Case temperature Tc (C) PD - Tc 200 50 Dynamic input/output characteristics 20 Common source ID = 75 A Tc = 25C 40 Pulse test (W) (V) 160 VGS 16 PD Drain-source voltage VDS Drain power dissipation VDS 20 VDD = 24 V 12 8 80 40 10 4 10 0 40 80 120 160 200 0 0 40 80 120 160 0 200 Case temperature Tc (C) Total gate charge Qg (nC) 4 2001-12-11 Gate-source voltage 120 30 6 12 VGS (V) 2SK3439 rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 0.00001 Single 0.0001 0.001 0.01 0.1 PDM t T Duty = t/T Rth (ch-c) = 1.0C/W 1 10 Pulse width tw (s) Safe operating area 300 ID max (pulsed) * 100 s * 1000 EAS - Tch (mJ) Avalanche energy EAS 100 ID max (continuous) 1 ms * 30 800 (A) 600 ID 10 DC operation Tc = 25C 400 Drain current 3 200 1 *: Single nonrepetitive pulse Tc = 25C 0.3 Curves must be derated linearly with increase in temperature 0.1 0.1 1 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) VDSS max 10 100 Drain-source voltage VDS (V) 15 V 0V BVDSS IAR VDD VDS Waveform AS = 1 B VDSS L I2 B 2 VDSS - VDD Test circuit RG = 25 VDD = 24 V, L = 100 H 5 2001-12-11 2SK3439 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2001-12-11 |
Price & Availability of 2SK3439
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |